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A Lifetime Prediction Method for IGBT Modules Considering the Self-Accelerating Effect of Bond Wire Damage
IEEE Journal of Emerging and Selected Topics in Power Electronics ( IF 5.5 ) Pub Date : 2020-05-04 , DOI: 10.1109/jestpe.2020.2992311
Fei Qin , Xiaorui Bie , Tong An , Jingru Dai , Yanwei Dai , Pei Chen

As core components of power converters, the insulated gate bipolar transistor (IGBT) module is required to have long-term reliability in increasingly more applications. To assess and improve the reliability, power cycling (PC) tests are conducted to determine the lifetime of IGBT modules; these tests are very time-consuming and may take a couple of weeks or even months for a single sample. Therefore, an urgent need in the industrial community is to develop an accurate and efficient method to predict the lifetime of the IGBT modules. In this article, we present a lifetime prediction method, in which the self-accelerating effect of bond wire damage on the lifetime is considered by using the feedback from the collector–emitter ON-resistance degradation into the power loss model, and a degradation model is proposed to describe the degradation process of the collector–emitter ON-resistance. Base on the physical PC tests of IGBT modules, we demonstrate that the proposed method accurately and efficiently predicts the lifetime of IGBT modules.

中文翻译:

考虑键合线损坏自加速效应的IGBT模块寿命预测方法

作为功​​率转换器的核心组件,绝缘栅双极晶体管(IGBT)模块需要在越来越多的应用中具有长期可靠性。为了评估和提高可靠性,进行了功率循环(PC)测试以确定IGBT模块的寿命。这些测试非常耗时,单个样品可能要花费几周甚至几个月的时间。因此,工业界迫切需要开发一种准确有效的方法来预测IGBT模块的寿命。在本文中,我们提出了一种寿命预测方法,其中通过使用集电极-发射极导通电阻退化到功率损耗模型的反馈来考虑键合线损坏对寿命的自加速效应,提出了退化模型来描述集电极-发射极导通电阻的退化过程。基于IGBT模块的物理PC测试,我们证明了所提出的方法能够准确有效地预测IGBT模块的寿命。
更新日期:2020-05-04
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