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Study on induced work-function variation of titanium metal gate on various electrical parameters for delta-doped layer germanium source vertical tunnel FET
Journal of Computational Electronics ( IF 2.1 ) Pub Date : 2021-03-15 , DOI: 10.1007/s10825-021-01686-8
K. Vanlalawmpuia , Brinda Bhowmick

Workfunction variation (WFV) in a high-k/titanium metal gate stack vertical tunnel field-effect transistor (FET) with a delta-doped layer in the germanium source is explored using technology computer-aided design simulations. The field-induced quantum confinement effect is also evaluated for the vertical tunnel FET. The impact of the gate area on various electrical parameters such as the ON-current (σION), OFF current (σIOFF), current ratio [σ(ION/IOFF)], subthreshold swing (σSS), threshold voltage (σVT), and analog performance parameters such as the total gate capacitance (σCgg), transconductance (σgm), and cutoff frequency (σfT) due to WFV of the titanium gate metal is evaluated. The results show that the variability in ION and IOFF increases when decreasing the overall transistor gate area for different metal grain sizes. In addition, the variations in the subthreshold swing and threshold voltage also decrease for a larger gate area. The distributions of the electrical parameters show that, when the grain size is comparable to the gate dimension, the distribution is not Gaussian bounded. In addition, the plot of the ratio of the average grain size to the gate area reveals that a slope of more than ~ 120 mV is attained.



中文翻译:

δ掺杂层锗源垂直隧道FET在不同电参数下钛金属栅极感应功函数变化的研究

利用计算机辅助设计仿真技术,研究了锗含量为δ掺杂层的高k /钛金属栅叠层垂直隧道场效应晶体管(FET)中的功函数变化(WFV)。还对垂直隧道FET评估了场致量子限制效应。栅极面积上的各种电参数,如导通电流(冲击σI ON),截止电流(σI OFF),电流比[ σON /OFF)],亚阈值摆幅(σ SS),阈值电压(σV Ť),以及模拟性能的参数,如总的栅极电容(σC GG),跨导(ΣG)和截止频率(ΣF Ť)由于钛栅极金属的WFV进行评价。结果表明,I ONI OFF的变异性当减小不同金属晶粒尺寸的总晶体管栅极面积时,其增大。另外,对于较大的栅极面积,亚阈值摆幅和阈值电压的变化也减小。电参数的分布表明,当晶粒尺寸与浇口尺寸相当时,该分布不是高斯有界的。此外,平均晶粒尺寸与浇口面积之比的曲线图表明,可获得大于〜120 mV的斜率。

更新日期:2021-03-15
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