Delafossite compounds are layered ternary oxides known for simultaneous exhibition of significant carrier conduction and optical transparency. To survey effect of simultaneous cationic and anionic hole doping in prototype delafossite CuCrO₂, we have analyzed the structural, optical, impedance and transport mechanism of ${\text{CuCr}}_{1-\text{x}}{\text{Li}}_{\text{x}}{\text{O}}_{2-\text{y}}{\text{S}}_{\text{y}}$ (x and y ranging 0–2 atomic %) prepared by solid state heating. The substitutional site occupancy of ${\text{Li}}_{\text{Cr}}^{••}$ and ${\text{S}}_{\text{O}}^{\times }$ are confirmed and quantified by Rietveld analysis. Valence band dispersion is demonstrated upon ${\text{Li}}_{\text{Cr}}^{••}$ and ${\text{S}}_{\text{O}}^{\times }$ co-doping by x-ray photoelectron spectroscopy with extended contribution from shallow S 3p antibonding states. From diffuse reflectance spectra, the optical gap (~3.5 eV) is evaluated to be wide even upon co-doping. Carrier density and hole mobility for $\text{CCO}/({\text{Li}}_{\text{Cr}}^{••}+{\text{S}}_{\text{O}}^{\times })$ to be 5.32 × 10¹⁵ cm⁻³ and 23.50 cm²V⁻¹s⁻¹, respectively. This scheme of band engineering is indicative of a more persuasive alternative to reach the hole conductivity bottleneck threshold.

Delafossite化合物是层状三元氧化物，可同时显示出显着的载流子传导性和光学透明性。为了调查在阳离子型铜铁矿CuCrO ₂中同时进行阳离子和阴离子空穴掺杂的效果，我们分析了三氟乙磺酸铜的结构，光学，阻抗和传输机理。${\text{铜铬}}_{\mathrm{1个}-\text{X}}{\text{里}}_{\text{X}}{\text{Ø}}_{\mathrm{2个}-\text{ÿ}}{\text{小号}}_{\text{ÿ}}$（x和y范围为0–2原子％）通过固态加热制备。的替代位点占用${\text{里}}_{\text{铬}}^{••}$ 和 ${\text{小号}}_{\text{Ø}}^{\times }$通过Rietveld分析进行确认和量化。价带色散经证明${\text{里}}_{\text{铬}}^{••}$ 和 ${\text{小号}}_{\text{Ø}}^{\times }$通过X射线光电子能谱进行共掺杂，并具有浅S 3 p反键态的扩展贡献。根据漫反射光谱，即使在共掺杂时，光学间隙（〜3.5 eV）也被评估为较宽。载流子密度和空穴迁移率$\text{首席财务官}/（{\text{里}}_{\text{铬}}^{••}+{\text{小号}}_{\text{Ø}}^{\times }）$分别为5.32×10 ¹⁵  cm ^-3和23.50 cm ² V ^-1 s ^-1。频带工程的这种方案指示出更具说服力的替代方案，以达到空穴电导率瓶颈阈值。