This work reports a novel Graphene Field Effect Transistor (GFET) based transimpedance amplifier (TIA) for optical radar detection in medical applications. Design-I includes a microstrip line (MSL) based UWB resonator circuit which enables the TIA design to operate in UWB range of frequency with high Q-factor. Design-II comprises MSL UWB resonator integrated stagger-tuned CR-RGC TIA which enhances the transimpedance limit and mitigates the effect of photodiode capacitance results in higher bandwidth performance. The proposed TIA realizes a 2.6 times lesser noise compared to the conventional CR-RGC TIA. A flat transimpedance gain of 64 ​dBΩ and ultra-low input-referred noise current density of 8.9 pA/√Hz are achieved using gain and noise optimization methods. Additionally, a dynamic range of 49 ​dB with a group delay variation (GDV) of ±25 ps is achieved over the entire UWB range. The TIA demonstrates a 25 ​Gb/s data rate while a bit-error-rate (BER) less than 10⁻¹⁰ is achieved. The chip occupies an area of 0.67∗0.72 ​mm² while consuming power of 19 ​mW under the supply voltage of 1.8 ​V.

这项工作报告了一种新颖的基于石墨烯场效应晶体管（GFET）的跨阻放大器（TIA），用于医疗应用中的光学雷达检测。Design-I包括一个基于微带线（MSL）的UWB谐振器电路，该电路使TIA设计能够在具有高Q因子的UWB频率范围内工作。Design-II包含集成了交错调谐CR-RGC TIA的MSL UWB谐振器，它可以增强跨阻极限并减轻光电二极管电容的影响，从而获得更高的带宽性能。与传统的CR-RGC TIA相比，拟议的TIA实现的噪音要小2.6倍。使用增益和噪声优化方法可实现64dBΩ的平坦互阻增益和8.9 pA /√Hz的超低输入参考噪声电流密度。此外，在整个UWB范围内，动态范围为49 dB，群延迟变化（GDV）为±25 ps。TIA的数据速率为25 Gb / s，而误码率（BER）小于10达到^-10。在电源电压为1.8 V时，芯片面积为0.67 * 0.72 mm ^2，而功耗为19 mW。