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Growth of High-Performance 4-5μm Thick Film REBCO Tapes Doped With Hafnium Using Advanced MOCVD
IEEE Transactions on Applied Superconductivity ( IF 1.8 ) Pub Date : 2021-02-18 , DOI: 10.1109/tasc.2021.3060366
Mahesh Paidpilli , Rudra Pratap , Mehdi Kochat , Eduard Galstyan , Chirag Goel , Goran Majkic , Venkat Selvamanickam

Advanced metal organic chemical vapor deposition technique (A-MOCVD) was used to grow 4-5 μm thick REBa 2 Cu 3 O 7−δ (REBCO, RE = rare earth) films, doped with 5% and 15% Hf . Thick REBCO films doped with 5% Hf exhibit self-field critical current density ( Jc ) over 1.8 MA/cm 2 at 77 K and 3 MA/cm 2 at 65 K, 1.5 T. Increasing the Hf content to 15% resulted in Jc above 9 MA/cm 2 at 20 K, 9 T. The effect of (Ba+Hf)/Cu content in Hf-added (5 and 15 mol.%) REBCO films on the critical current density at 77 K, 0 T, c-axis lattice parameter and out-of- plane texture has been studied . In addition to growth of thick film REBCO tapes with superior performance, the A-MOCVD reactor has been used to quadruple the precursor-to-film conversion efficiency above 45%. This achievement has a first order impact in lowering the cost of REBCO tapes made by A-MOCVD.

中文翻译:

使用先进的MOCVD生长掺4的高性能4-5μm厚膜REBCO带

高级金属有机化学气相沉积技术(A-MOCVD)来生长4-5微米厚的REBa 2 的Cu 3 ö 7-δ(REBCO,RE =稀土)膜,掺杂有5%和15%的Hf 掺有5%Hf的REBCO厚膜表现出自电场临界电流密度( Ĵ ç )在77 K和1.5 T下在77 K时超过1.8 MA / cm 2,在65 K时超过3 MA / cm 2。将Hf含量提高到15%Ĵ ç在20 K,9 T时高于9 MA / cm 2。添加Hf(5和15 mol。%)REBCO膜中(Ba + Hf)/ Cu含量对在77 K,0 T时的临界电流密度的影响,研究了c轴晶格参数和面外纹理 除了生长具有卓越性能的厚膜REBCO胶带外,A-MOCVD反应器还用于将前体到薄膜的转化效率提高四倍,达到45%以上。这一成就对降低由A-MOCVD制成的REBCO胶带的成本具有重要的影响。
更新日期:2021-03-12
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