This letter proposes a high output power 250-GHz power amplifier adopting dual-shunt elements in the implementation of maximum achievable gain ( $G_{\mathrm {max}}$ ) core. By the adoption of the dual-shunt-element-based $G_{\mathrm {max}}$ -core, the output transistor size can be increased, which leads to higher output power. Implemented in a 65-nm CMOS, the measurement results show a peak gain of 12.6 dB, $P_{\mathrm {sat}}$ of 3/3.8 dBm, OP _{1 dB} of 1.4/2.3 dBm, and peak power-added efficiency (PAE) of 4.8/3.2% at 248.6 GHz while dissipating 40/62.4 mW from a 1/1.2-V supply, respectively.

中文翻译：

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250 GHz的12.6 dB增益和3.8 dBm P采用基于双并联元件的65nm CMOS_饱和功率放大器G_最大-Core

这封信提出了一种在实现最大可实现增益时采用双并联元件的高输出功率250 GHz功率放大器（ $ G _ {\ mathrm {max}} $ ） 核。通过采用基于双分流元件 $ G _ {\ mathrm {max}} $ 核心时，可以增加输出晶体管的尺寸，从而导致更高的输出功率。测量结果显示在65纳米CMOS中，峰值增益为12.6 dB， $ P _ {\ mathrm {sat}} $ 在248.6 GHz时功耗为3 / 3.8 dBm，OP _{1 dB}为1.4 / 2.3 dBm，峰值功率附加效率（PAE）为4.8 / 3.2％，同时分别从1 / 1.2 V电源消耗40 / 62.4 mW的功率。