A high-isolation fully integrated 26.5–36.2-GHz frequency-division duplex (FDD) transmit–receive (T/R) duplexer (DUX) front-end module, containing DUX, power amplifier (PA), and low-noise amplifier (LNA), for fifth-generation (5G) wireless systems is demonstrated on a single 0.18- $\mu \text{m}$ BiCMOS Si chip. The isolation between the PA output and LNA input is generally better than 40 dB from 15 to 60 GHz. The DUX module has a 20.8-dB gain with a 13.5-dB minimum noise figure at 28 GHz for the entire receive path. It provides about 12-dB gain with better than an 11-dBm maximum output power across 23.5–36.2 GHz for the transmit path. Leakage of the transmit signal through Si substrate is considered and suppressed using PA with deep-n-well structure and p-type/n-type grounding guard rings. The entire module only occupies an active area of 2.1 mm ² .

中文翻译：

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适用于5G系统，0.18μmBiCMOS上的高隔离度26.5–36.2 GHz T / R双工器模块

一个高度隔离的，完全集成的26.5–36.2 GHz频分双工（FDD）收发双工（DUX）前端模块，包含DUX，功率放大器（PA）和低噪声放大器（第五代（5G）无线系统的LNA）在单个0.18- $ \ mu \ text {m} $ BiCMOS Si芯片。从15到60 GHz，PA输出和LNA输入之间的隔离度通常优于40 dB。DUX模块在整个接收路径上的28 GHz频率下具有20.8 dB的增益和13.5 dB的最小噪声系数。它在23.5–36.2 GHz范围内为传输路径提供了约12dB的增益，并且优于11dBm的最大输出功率。使用具有深n阱结构和p型/ n型接地保护环的PA，可以考虑并抑制通过Si衬底的发射信号的泄漏。整个模块仅占据2.1 mm ²的有效面积 。