Heterostructures with annular groups of GeSi quantum dots grown on Si(001) substrates with GeSi nanodisks embedded beneath the surface are investigated by the electron spin resonance technique. It is demonstrated that electrons in annular groups can be localized at the apexes of quantum dots in the annular groups. Narrowing of the electron spin resonance line of the annular electron states localized at the nanodisks is observed. The width of this line decreases when the magnetic field deviates from the structure growth direction, which confirms experimentally the earlier prediction that the spin relaxation time T₂ should increase in this case.

中文翻译：

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GeSi量子点环分子在异质结构中的电子自旋共振。

通过电子自旋共振技术研究了在具有嵌入表面之下的GeSi纳米盘的Si（001）衬底上生长的具有环状GeSi量子点的环状结构。证明了环状基团中的电子可以定位在环状基团中量子点的顶点。观察到位于纳米盘处的环状电子状态的电子自旋共振线变窄。当磁场偏离结构生长方向时，该线的宽度减小，这在实验上证实了较早的预测，即在这种情况下，自旋弛豫时间T ₂应该增加。