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Nanostructured metal oxide semiconductor-based sensors for greenhouse gas detection: progress and challenges
Royal Society Open Science ( IF 3.5 ) Pub Date : 2021-03-10 , DOI: 10.1098/rsos.201324
Yogendra K. Gautam 1 , Kavita Sharma 1 , Shrestha Tyagi 1 , Anit K. Ambedkar 1 , Manika Chaudhary 1 , Beer Pal Singh 1
Affiliation  

Climate change and global warming have been two massive concerns for the scientific community during the last few decades. Anthropogenic emissions of greenhouse gases (GHGs) have greatly amplified the level of greenhouse gases in the Earth's atmosphere which results in the gradual heating of the atmosphere. The precise measurement and reliable quantification of GHGs emission in the environment are of the utmost priority for the study of climate change. The detection of GHGs such as carbon dioxide, methane, nitrous oxide and ozone is the first and foremost step in finding the solution to manage and reduce the concentration of these gases in the Earth's atmosphere. The nanostructured metal oxide semiconductor (NMOS) based technologies for sensing GHGs emission have been found most reliable and accurate. Owing to their fascinating structural and morphological properties metal oxide semiconductors become an important class of materials for GHGs emission sensing technology. In this review article, the current concentration of GHGs in the Earth's environment, dominant sources of anthropogenic emissions of these gases and consequently their possible impacts on human life have been described briefly. Further, the different available technologies for GHG sensors along with their principle of operation have been largely discussed. The advantages and disadvantages of each sensor technology have also been highlighted. In particular, this article presents a comprehensive study on the development of various NMOS-based GHGs sensors and their performance analysis in order to establish a strong detection technology for the anthropogenic GHGs. In the last, the scope for improved sensitivity, selectivity and response time for these sensors, their future trends and outlook for researchers are suggested in the conclusion of this article.



中文翻译:

基于纳米结构的基于金属氧化物半导体的温室气体传感器:进展与挑战

在过去的几十年中,气候变化和全球变暖一直是科学界关注的两个重大问题。人为排放的温室气体(GHG)大大放大了地球大气中的温室气体含量,导致大气逐渐升温。精确测量和可靠地量化环境中温室气体的排放量是研究气候变化的重中之重。检测诸如二氧化碳,甲烷,一氧化二氮和臭氧之类的温室气体是寻找解决方案来管理和减少地球大气中这些气体浓度的第一步,也是最重要的一步。已经发现用于感测GHG排放的基于纳米结构的金属氧化物半导体(NMOS)的技术是最可靠和准确的。由于其迷人的结构和形态特性,金属氧化物半导体已成为用于温室气体排放传感技术的重要材料类别。在这篇综述文章中,简要描述了地球环境中当前温室气体的浓度,这些气体的人为排放的主要来源以及因此对人类生活的可能影响。此外,已经大量讨论了用于GHG传感器的不同可用技术以及它们的工作原理。每种传感器技术的优缺点也都得到了强调。尤其是,本文对各种基于NMOS的温室气体传感器的发展及其性能分析进行了全面的研究,以建立针对人为温室气体的强大检测技术。在最后,

更新日期:2021-03-10
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