The formation energy of single Shockley stacking faults (1SSFs) in thermo-equilibrium is crucial for validating the anomalous expansion mechanism of 1SSF induced by forward current injection in 4H-SiC bipolar devices. As a function of variable mechanical stress externally applied to a plate sample of 4H-SiC, we systematically measured the ultraviolet intensity thresholds demarcating photo-induced expansion and contraction of 1SSFs. The experimental results on two types of 1SSF differing in the Schmid factor of mobile partial dislocations achieving 1SSF expansion/contraction showed a value of 4.71.6 mJ m⁻², significantly smaller than the reported value of 142.5 mJ m⁻² obtained by transmission electron microscopic measurements.

热平衡中单个Shockley堆垛层错（1SSF）的形成能量对于验证4H-SiC双极器件中正向电流注入引起的1SSF异常膨胀机制至关重要。根据外部施加到4H-SiC板样品上的可变机械应力的函数，我们系统地测量了界定1SSFs的光诱导膨胀和收缩的紫外线强度阈值。对两种能实现1SSF扩展/收缩的移动部分位错的Schmid因子的Schmid因子不同的1SSF的实验结果表明，其值为4.71.6 mJ m ^-2，显着小于通过透射电子获得的报道值142.5 mJ m ^-2。显微测量。