The paper describes the implementation of a bandgap reference based on native‐MOSFET transistors for low‐power sensor node applications. The circuit can operate from −55°C to 125°C and with a supply voltage ranging from 1.5 to 4.2 V. Therefore, it is compatible with the temperature range of automotive and military‐aerospace applications, and for direct Li‐Ion battery attach. Moreover, the circuit can operate without any dedicated start‐up circuit, thanks to its inherent single operating point. A mathematical model of the reference circuit is presented, allowing simple portability across technology nodes, with current consumption and silicon area as design parameters. Implemented in a 55‐nm CMOS technology, the voltage reference achieves a measured average (maximum) temperature coefficient of 28 ppm/°C (43 ppm/°C) and a measured sample‐to‐sample variation within 57 mV, with a current consumption of 420 nA at 27°C.

中文翻译：

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具有−55°C至125°C的低功耗本机基于NMOS的带隙基准，具有锂离子电池兼容性

本文介绍了针对低功耗传感器节点应用的基于本机MOSFET晶体管的带隙基准的实现。该电路可在以下条件下工作：55°C至125°C，电源电压范围为1.5至4.2V。因此，它与汽车和军用航空航天应用的温度范围兼容，并且可直接连接锂离子电池。此外，由于其固有的单一工作点，该电路无需任何专用的启动电路即可工作。给出了参考电路的数学模型，该模型允许跨技术节点的简单可移植性，并以电流消耗和硅面积为设计参数。该基准电压源采用55 nm CMOS技术实现，在平均电流下，测得的平均（最大）温度系数为28 ppm /°C（43 ppm /°C），且样品间的测量偏差在57 mV以内。在27°C时消耗420 nA的电流。