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A Novel Controlled Punch-Through IGCT for Modular Multilevel Converter With Overvoltage Bypass Function
IEEE Transactions on Power Electronics ( IF 6.7 ) Pub Date : 2020-12-24 , DOI: 10.1109/tpel.2020.3046679
Jiapeng Liu , Biao Zhao , Yongmin Chen , Wenpeng Zhou , Xiaorui Wang , Fanglin Chen , Zhengyu Chen , Zhanqing Yu , Rong Zeng

The integrity of housing and feature of short circuit is hardly guaranteed for traditional power devices under overvoltage breakdown with following high surge energy. Thus, extra bypass thyristor is needed to achieve stable overvoltage bypass protection for submodules in modular multilevel converters at present. In this article, a novel controlled punch-through IGCT (CP-IGCT) is presented. Based on the punch-through breakdown principle instead of avalanche breakdown principle, the device can achieve breakdown at design voltage with uniformity, thermal stability, and robust package rupture-resilience. As a consequence, no extra sacrificial device is necessary. The fabricated sample proves a stable breakdown at 4000 V and a robust short-circuit feature after energy release of a 18 mF capacitor under 4500 V.

中文翻译:

具有过压旁路功能的模块化多电平转换器的新型可控穿通IGCT

传统电源设备在过高击穿能量的情况下过压击穿时,很难保证外壳的完整性和短路特性。因此,目前需要额外的旁路晶闸管来为模块化多电平转换器中的子模块实现稳定的过压旁路保护。在本文中,提出了一种新颖的受控穿通IGCT(CP-IGCT)。基于击穿击穿原理而不是雪崩击穿原理,该器件可以在设计电压下实现击穿,具有均匀性,热稳定性和强大的封装抗断裂性。结果,不需要额外的牺牲装置。在4000 V下释放18 mF电容器的能量后,制成的样品在4000 V时具有稳定的击穿性能,并具有强大的短路特性。
更新日期:2020-12-24
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