Purpose

The purpose of the paper is to report an emulation configuration of a three pinch-off memristor (TPM), whose transient characteristics consist three cross-over points on the voltage-current plane, which is dissimilar to a conventional memristor. These characteristics can be very useful in memristor-based multi-bit memory devices and hyperchaotic oscillators.

Design/methodology/approach

The work describes the Mathematical framework for TPM and a circuit emulator based on the derived conditions. The configuration is based on five operational transconductance amplifier (OTAs) and four grounded passive elements. After which, we have verified its operation using personal simulation program with integrated circuit emphasis simulation environment. Finally, the implementation of OTA-based TPM using commercial integrated circuit (IC) LM13700 has also been presented.

Findings

It has been shown that a flux-dependent memductance expression of cubic order can show three intersections on the VI contour under certain parameter related constraints. Moreover, the OTA-based emulator reported in the work is very compact in nature because of the no use of external multiplier IC/circuitry, which has been popular in previous emulators.

Originality/value

For the first time, a multiple cross-over memristor emulator has been reported which can operate under practical operating conditions such as at practical operating frequencies and sinusoidal excitation.

中文翻译：

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三交叉忆阻器的数学框架及其OTA实现

目的

本文的目的是报告三夹断忆阻器 (TPM) 的仿真配置，其瞬态特性包括电压-电流平面上的三个交叉点，这与传统忆阻器不同。这些特性在基于忆阻器的多位存储设备和超混沌振荡器中非常有用。

设计/方法/方法

该工作描述了 TPM 的数学框架和基于导出条件的电路仿真器。该配置基于五个运算跨导放大器 (OTA) 和四个接地无源元件。之后，我们使用带有集成电路重点仿真环境的个人仿真程序验证了它的操作。最后，还介绍了使用商用集成电路 (IC) LM13700 实现基于 OTA 的 TPM。

发现

已经表明，在某些参数相关的约束条件下，三次阶通量相关的电感表达式可以在 VI 轮廓上显示三个交点。此外，工作中报告的基于 OTA 的仿真器本质上非常紧凑，因为没有使用在以前的仿真器中流行的外部乘法器 IC/电路。

原创性/价值

首次报道了一种多交叉忆阻器仿真器，它可以在实际工作条件下工作，例如在实际工作频率和正弦激励下。