Plasma simulations require accurate yield data to predict the electron flux that is emitted when plasma-exposed surfaces are bombarded by energetic particles. One can measure yields directly using particle beams, but it is impractical to create a separate beam of each particle produced by typical plasmas. In contrast, measurements made in situ, during plasma exposure, provide useful values for the total emitted flux produced by all incident particles. Here, in situ measurements were performed in a radio-frequency (rf) biased, inductively coupled plasma (icp) system in 0.67Pa and 1.33Pa (5mTorr and 10mTorr) of argon gas. The rf current and voltage across the sheath adjacent to the rf-biased electrode were measured, along with Langmuir probe measurements of ion current density and electron temperature. The measurements are input into a numerical sheath model, which allows the emitted electron flux to be distinguished from other current mechanisms. The effective yield, i.e., the ratio of the total emitted electron flux to the incident ion flux, is also determined, as a function of incident ion energy. Results for the effective yield of a sputter-deposited SiO₂ film are reported and compared with previous work. The measured effective yield can be considered the yield from Ar⁺ kinetic emission, which, in these experiments, dominates other emission processes. From additional literature data, emission yields for other processes—incident photons, Ar metastables, fast Ar atoms, and Ar⁺ potential emission—are recommended and are shown to be consistent.

等离子体模拟需要准确的屈服数据，以预测当暴露于等离子体的表面被高能粒子轰击时所发射的电子通量。可以使用粒子束直接测量产率，但是对由典型等离子体产生的每个粒子创建单独的束是不切实际的。相反，在等离子体暴露期间原位进行的测量可为所有入射粒子产生的总发射通量提供有用的值。在这里，就地测量是在射频（rf）偏压，电感耦合等离子体（icp）系统中以0.67Pa和1.33Pa（5mTorr和10mTorr）的氩气进行的。测量了跨过射频偏置电极的护套两端的射频电流和电压，以及Langmuir探针对离子电流密度和电子温度的测量结果。将测量值输入到数字鞘模型中，该模型可以将发射的电子通量与其他电流机制区分开。还根据入射离子能量确定有效产率，即总发射电子通量与入射离子通量之比。溅射沉积的SiO ₂的有效产率的结果电影被报道并与以前的工作进行了比较。可以将测得的有效产率视为来自Ar ⁺动力学发射的产率，在这些实验中，它占主导地位的是其他发射过程。从其他文献数据中，推荐了其他过程的发射率，例如入射光子，Ar亚稳态，快速Ar原子和Ar ⁺势能发射，并证明是一致的。