In this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.

中文翻译：

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离子束溅射HfO ₂薄膜的结晶行为及其对激光损伤阈值的影响

在这项工作中，我们介绍了关于离子束溅射氧化f在0001 SiO2衬底上的热结晶及其对激光诱导损伤阈值（LIDT）的影响的结果。使用原位X射线衍射法研究了结晶过程。我们确定结晶的活化能为2.6±0.5 eV。发现微晶的生长遵循二维生长模式。这与高活化能相结合，导致表观层厚度依赖的结晶温度。在经过热处理的3个四分之一波长厚的哈夫尼亚层上，355 nm处的LIDT测量表明，773 K处理1 h的0％LIDT减小了。热处理5小时会导致LIDT值显着增加。