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Surface properties of semiconductors from post-illumination photovoltage transient
Surfaces and Interfaces ( IF 6.2 ) Pub Date : 2021-03-06 , DOI: 10.1016/j.surfin.2021.101052
Yury Turkulets , Ilan Shalish

Free surfaces of semiconductors respond to light by varying their surface voltage (surface band bending). This surface photovoltage may be easily detected using a Kelvin probe. Modeling the transient temporal behavior of the surface photovoltage after the light is turned off may serve as a means to characterize several key electronic properties of the semiconductor, which are of fundamental importance in numerous electronic device applications, such as transistors and solar cells. In this paper, we develop a model for this temporal behavior and use it experimentally to characterize layers and nanowires of several semiconductors. Our results suggest that what has previously been considered to be a logarithmic decay is a rather rough approximation. Due to the known limited frequency bandwidth of the Kelvin probe method, most previous Kelvin-probe-based methods have been limited to “slow responding” semiconductors. The model we propose extends this range of applicability.



中文翻译:

照明后的光电压瞬变对半导体的表面特性的影响

半导体的自由表面通过改变其表面电压(表面带弯曲)来响应光。使用开尔文探针可以很容易地检测到该表面光电压。在关闭光之后对表面光电压的瞬态瞬时行为进行建模可以用作表征半导体的几个关键电子特性的手段,这在众多电子设备应用中至关重要,例如晶体管和太阳能电池。在本文中,我们为这种时间行为开发了一个模型,并通过实验将其用于表征几种半导体的层和纳米线。我们的结果表明,以前被认为是对数衰减的是一个近似的近似值。由于开尔文(Kelvin)探针方法的已知有限的频率带宽,以前,大多数基于开尔文探针的方法仅限于“响应缓慢”的半导体。我们提出的模型扩展了适用范围。

更新日期:2021-03-18
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