当前位置: X-MOL 学术Opt. Mater. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Effect of vacuum annealing on structural, optical and magnetic properties of Sn doped ZnS thin films
Optical Materials ( IF 3.9 ) Pub Date : 2021-03-06 , DOI: 10.1016/j.optmat.2021.110961
Chaitanya Kumar Kunapalli , Deepannita Chakraborty , Kaleemulla Shaik

Tin doped Zinc Sulphide (Zn1-xSnxS) thin films at x = 0.00, 0.02, 0.05, 0.08 were prepared onto Corning 7059 glass substrates using electron beam evaporation technique and then subjected to vacuum annealing at 300 °C for 2 h. The effect of vacuum annealing on structural, optical and magnetic properties of the thin films were studied in detail. From XRD studies, it was found that the vacuum annealed thin films were in cubic structure and have finer crystallite size compared to the unannealed thin films. All the films exhibited high transmittance (85%) in the visible region. The vacuum annealing led to narrowing of band gap compared to the unannealed thin films. The presence of surface defects in vacuum annealed thin films were confirmed by the observation of two broad emission photoluminescence peaks at 420 nm and 440 nm. But the reduction in the intensity of photoluminescence emission peaks correlate to the decrease in the concentration of sulphur vacancies. Also, the vacuum annealed Sn doped ZnS thin films were found to exhibit paramagnetic behaviour with lesser maximum magnetization value compared to that of the unannealed Sn doped ZnS thin films.



中文翻译:

真空退火对掺Sn ZnS薄膜的结构,光学和磁性的影响

锡掺杂的硫化锌(锌1-x Sn的X S)薄膜在X 使用电子束蒸发技术在康宁7059玻璃基板上制备= 0.00、0.02、0.05、0.08,然后在300°C的温度下进行2h的真空退火。详细研究了真空退火对薄膜的结构,光学和磁性的影响。从XRD研究中发现,与未退火的薄膜相比,真空退火的薄膜为立方结构并且具有更细的晶粒尺寸。所有薄膜在可见光区域均显示出高透射率(85%)。与未退火的薄膜相比,真空退火导致带隙变窄。通过观察在420nm和440nm处的两个宽发射光致发光峰,证实了真空退火的薄膜中存在表面缺陷。但是,光致发光发射峰强度的降低与硫空位浓度的降低相关。另外,发现与未退火的Sn掺杂的ZnS薄膜相比,真空退火的Sn掺杂的ZnS薄膜表现出顺磁性能,具有最大的磁化强度值。

更新日期:2021-03-07
down
wechat
bug