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Moderate-Temperature Near-Field Thermophotovoltaic Systems with Thin-Film InSb Cells
Chinese Physics Letters ( IF 3.5 ) Pub Date : 2021-03-05 , DOI: 10.1088/0256-307x/38/2/024201
Rongqian Wang 1 , Jincheng Lu 1, 2 , Jian-Hua Jiang 1
Affiliation  

Near-field thermophotovoltaic systems functioning at 400–900 K based on graphene-hexagonal-boron-nitride heterostructures and thin-film InSb p–n junctions are investigated theoretically. The performances of two near-field systems with different emitters are examined carefully. One near-field system consists of a graphene-hexagonal-boron-nitride-graphene sandwiched structure as the emitter, while the other system has an emitter made of the double graphene-hexagonal-boron-nitride heterostructure. It is shown that both systems exhibit higher output power density and energy efficiency than the near-field system based on mono graphene-hexagonal-boron-nitride heterostructure. The optimal output power density of the former device can reach 1.3 105 W/m2, while the optimal energy efficiency can be as large as 42% of the Carnot efficiency. We analyze the underlying physical mechanisms that lead to the excellent performances of the proposed near-field thermophotovoltaic systems. Our results are valuable toward high-performance moderate temperature thermophotovoltaic systems as appealing thermal-to-electric energy conversion (waste heat harvesting) devices.



中文翻译:

具有薄膜 InSb 电池的中温近场热光伏系统

理论上研究了基于石墨烯-六方-氮化硼异质结构和薄膜 InSb p-n 结在 400-900 K 下运行的近场热光伏系统。仔细检查了具有不同发射器的两个近场系统的性能。一个近场系统由石墨烯-六方-氮化硼-石墨烯夹层结构作为发射极,而另一个系统具有由双石墨烯-六方-氮化硼异质结构制成的发射极。结果表明,这两种系统都表现出比基于单石墨烯-六方-氮化硼异质结构的近场系统更高的输出功率密度和能量效率。前一种器件的最佳输出功率密度可达1.3 10 5 W/m 2,而最佳能效可高达卡诺效率的 42%。我们分析了导致所提出的近场热光伏系统具有优异性能的潜在物理机制。我们的结果对于高性能中温热光伏系统作为有吸引力的热电能量转换(废热收集)设备非常有价值。

更新日期:2021-03-05
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