An automated system for measuring the energy gap E _g of a p–n junction semiconductor diodes was presented in this study. The system, based on temperature–voltage (T–V) measurement, was designed and developed as a teaching tool to support teaching for undergraduate students. The energy gap of diodes was measured by varying the diode temperature from 273 to 343 K and by measuring the voltage drop across the diode while the bias current of diodes was kept constant at a specific value. In the proposed system, an Arduino UNO R3 microcontroller was employed to automatically acquire the temperature and voltage drop across the diode. T–V data were plotted, and then the slope and intercept were used to calculate the energy gap by a simplified diode equation. In this system, the temperature and voltage of the two diodes were measured simultaneously at different constant bias currents in the range of 10 μA–10 mA. The average E _g value of 1.22 eV obtained in this work is in good agreement with that reported in the literature.

在这项研究中，提出了一种用于测量ap-n结半导体二极管的能隙E _g的自动化系统。该系统基于温度-电压（T – V）测量，被设计和开发为支持本科生教学的教学工具。通过将二极管温度从273 K改变到343 K并通过测量二极管两端的压降来测量二极管的能隙，同时将二极管的偏置电流保持恒定在特定值。在建议的系统中，使用了Arduino UNO R3微控制器来自动获取二极管上的温度和压降。T – V绘制数据，然后使用斜率和截距通过简化的二极管方程式计算能隙。在这个系统中，两个二极管的温度和电压在10的范围内不同的恒定偏置电流同时测量μ A-10毫安。在这项工作中获得的平均E _g值为1.22 eV与文献中报道的一致。