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A Complementary Ring Mixer Driven by a Single-Ended LO in 22-nm FD-SOI CMOS for K and Ka-Bands
IEEE Open Journal of Circuits and Systems Pub Date : 2021-02-12 , DOI: 10.1109/ojcas.2021.3058654
Paolo Valerio Testa , Laszlo Szilagyi , Corrado Carta , Frank Ellinger

This article presents a double-balanced up-conversion ring mixer based on complementary switches operating at millimeter-wave frequencies. Complementary-switching relieves the mixer from the need for a differential Local-Oscillator (LO) signal, simplifying the design and improving the circuit performance. A prototype, capable of operation between 18 GHz and 32 GHz, is implemented in a 22 nm FD-SOI CMOS technology offering n- and p-type transistors with comparable performance. Furthermore, the presented circuit also exploits the back-gate control voltage offered by the process to minimize the transistors threshold voltage, reducing the minimum LO power required to saturate the mixer gain. Measurements showed a conversion gain of −5.5 dB, an output power at 1 dB gain compression (o1dBCp) of −7 dBm, and a Radio-Frequency (RF) bandwidth of 10 GHz. These results were demonstrated for an LO power of 3 dBm at 23.5 GHz or 28 GHz, a DC power of 2.2mW, and all the mixer ports matched to 50 $\Omega $ . The active area of the chip is 0.11mm 2 , the smallest so far demonstrated for ring mixers. These performances translate in the best-reported figure of merit, which relates gain, RF up-converted power, and required DC and LO power.

中文翻译:

由单端LO驱动的22nm FD-SOI CMOS互补环形混频器,用于 ķK a-乐队

本文介绍了一种基于在毫米波频率下工作的互补开关的双平衡上变频环形混频器。互补开关使混频器无需使用差分本地振荡器(LO)信号,从而简化了设计并改善了电路性能。在22 nm FD-SOI CMOS技术中实现了能够在18 GHz至32 GHz之间工作的原型,该技术提供具有可比性能的n型和p型晶体管。此外,提出的电路还利用该过程提供的背栅控制电压来最小化晶体管的阈值电压,从而降低饱和混频器增益所需的最小LO功率。测量表明,转换增益为-5.5 dB,增益压缩(o1dBCp)为1 dB时的输出功率为-7 dBm,射频(RF)带宽为10 GHz。 $ \ Omega $ 。芯片的有效面积为0.11mm 2 ,这是迄今为止针对环形混合器展示的最小面积。这些性能体现了最佳的品质因数,它与增益,RF上变频功率以及所需的DC和LO功率有关。
更新日期:2021-03-05
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