Area-selective atomic layer deposition (ALD) is an approach to self-aligned, bottom-up nanofabrication with the potential to overcome many of the challenges facing the semiconductor industry around continued device downscaling. Currently, the most common method for achieving area-selective ALD uses self-assembled monolayers (SAMs) as a means of surface deactivation. Alternative routes are also being pursued that may better meet the demands of high-volume device manufacturing and overcome some disadvantages of the SAM method. One promising alternative is the use of small molecule inhibitors (SMIs). This Perspective provides an overview of the current developments in the use of SMIs for selective deposition by describing systems from the literature and providing insight into SMI selection. Although little is yet known about the mechanistic behavior of SMIs, this Perspective aims to lay the framework for both a better understanding of their inhibitive performance and strategies to innovate their design. It establishes two key interfaces—between the ALD precursor and the inhibitor, and between the inhibitor and the substrate—and discusses the role of each in selective deposition. Building upon the established understanding of SAMs together with current knowledge of SMIs, this Perspective aims to define guiding principles and key considerations for improving SMI design.

中文翻译：

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使用小分子抑制剂进行区域选择性原子层沉积的下一代纳米图案

区域选择性原子层沉积（ALD）是一种自对准，自下而上的纳米制造方法，有望克服围绕器件不断缩小的半导体行业面临的许多挑战。当前，用于实现区域选择性ALD的最常用方法是使用自组装单层（SAMs）作为表面钝化的手段。还正在寻求替代路线，以更好地满足大批量设备制造的需求并克服SAM方法的某些缺点。一种有希望的替代方法是使用小分子抑制剂（SMI）。该观点通过描述文献中的系统并提供对SMI选择的见解，概述了使用SMI进行选择性沉积的最新进展。尽管对SMI的机械行为知之甚少，但本“观点”旨在为更好地了解其抑制性能和创新设计策略奠定基础。它建立了ALD前驱物和抑制剂之间以及抑制剂和底物之间的两个关键界面，并讨论了它们各自在选择性沉积中的作用。基于对SAM的既定理解以及对SMI的当前了解，本《观点》旨在定义指导原则和改进SMI设计的关键考虑因素。以及在抑制剂和底物之间-并讨论了它们各自在选择性沉积中的作用。基于对SAM的既定理解以及对SMI的当前了解，本《观点》旨在定义指导原则和改进SMI设计的关键考虑因素。以及在抑制剂和底物之间-并讨论了它们各自在选择性沉积中的作用。基于对SAM的既定理解以及对SMI的当前了解，本《观点》旨在定义指导原则和改进SMI设计的关键考虑因素。