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DETERMINATION OF MAIN ELECTRICAL PARAMETERS OF Au–4H-n-SiC (MS) AND Au–Al2O3–4H-n-SiC (MIS) DEVICES
Surface Review and Letters ( IF 1.1 ) Pub Date : 2021-03-03 , DOI: 10.1142/s0218625x21500360
GÜLÇİN ERSÖZ DEMİR 1 , İBRAHİM YÜCEDAĞ 2
Affiliation  

In this study, Au–4H-n-SiC metal–semiconductor (MS) and Au–Al2O3–4H-n-SiC metal–insulator–semiconductor (MIS) devices were fabricated to examine the effects on the performance of electronic devices of interfacial insulating materials. In order to determine the dielectric properties, capacitance/conductance–voltage (C/GV) measurements were realized in a wide range of voltages (3.0 V)–(11.0 V). Current–voltage (IV) measurements to obtain the electric properties were realized at ±2.5V. Moreover, both the energy distributions of surface states (Nss) and series resistance (Rs) were obtained from the C/GV data. Obtained results provided that series resistance originating from interfacial layer (Al2O3) was more effective on the IV and C/GV characteristics which must be taken into account in the calculation of main electrical parameters. The rectification ratio (RR) and shunt resistance (Rsh) of the MIS device were almost 103 times greater than those of the MS structure. Using Al2O3 between Au and 4H-n-SiC also led to an increase in the value of barrier height (BH) and a decrease in the value of ideality factor (n). These results confirmed that Al2O3 layer leads to an increase in the performance of MS device with respect to low values of Nss, reverse saturation current (I0) and n and high values of RR, Rsh and BH.

中文翻译:

Au-4H-n-SiC (MS) 和 Au-Al2O3-4H-n-SiC (MIS) 器件主要电参数的测定

在本研究中,Au-4H-n-SiC 金属-半导体 (MS) 和 Au-Al 2 O 3 –4H-n-制造了SiC金属-绝缘体-半导体(MIS)器件,以检查界面绝缘材料对电子器件性能的影响。为了确定介电特性,电容/电导-电压(C/G)测量在很宽的电压范围内实现(-3.0 伏)–(11.0 伏)。电流-电压(一世)获得电性能的测量是在±2.5V. 此外,表面态的能量分布(ñss)和串联电阻(Rs)是从C/G数据。获得的结果提供了源自界面层的串联电阻(Al 2 O3)是更有效的一世C/G在计算主要电气参数时必须考虑的特性。整流比 (RR) 和分流电阻 (R)MIS 装置的体积几乎是 MS 结构的 10 3倍。在Au和4H之间使用Al 2 O 3 -n-SiC还导致势垒高度(BH)值的增加和理想因子值的降低(n). 这些结果证实,Al 2 O 3层导致 MS 器件的性能提高,相对于低值ñss,反向饱和电流(一世0)n和高 RR 值,R和 BH。
更新日期:2021-03-03
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