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DETERMINATION OF MAIN ELECTRICAL PARAMETERS OF Au–4H-n-SiC (MS) AND Au–Al2O3–4H-n-SiC (MIS) DEVICES
Surface Review and Letters ( IF 1.1 ) Pub Date : 2021-03-03 , DOI: 10.1142/s0218625x21500360 GÜLÇİN ERSÖZ DEMİR 1 , İBRAHİM YÜCEDAĞ 2
Surface Review and Letters ( IF 1.1 ) Pub Date : 2021-03-03 , DOI: 10.1142/s0218625x21500360 GÜLÇİN ERSÖZ DEMİR 1 , İBRAHİM YÜCEDAĞ 2
Affiliation
In this study, Au–4H-n -SiC metal–semiconductor (MS) and Au–Al2O3–4H-n -SiC metal–insulator–semiconductor (MIS) devices were fabricated to examine the effects on the performance of electronic devices of interfacial insulating materials. In order to determine the dielectric properties, capacitance/conductance–voltage (C / G –V ) measurements were realized in a wide range of voltages (− 3.0 V)–(11.0 V). Current–voltage (I –V ) measurements to obtain the electric properties were realized at ± 2 . 5 V. Moreover, both the energy distributions of surface states (N ss ) and series resistance (R s ) were obtained from the C / G –V data. Obtained results provided that series resistance originating from interfacial layer (Al2O3 ) was more effective on the I –V and C / G –V characteristics which must be taken into account in the calculation of main electrical parameters. The rectification ratio (RR) and shunt resistance (R sh ) of the MIS device were almost 103 times greater than those of the MS structure. Using Al2O3 between Au and 4H-n -SiC also led to an increase in the value of barrier height (BH) and a decrease in the value of ideality factor (n ) . These results confirmed that Al2O3 layer leads to an increase in the performance of MS device with respect to low values of N ss , reverse saturation current (I 0 ) and n and high values of RR, R sh and BH.
中文翻译:
Au-4H-n-SiC (MS) 和 Au-Al2O3-4H-n-SiC (MIS) 器件主要电参数的测定
在本研究中,Au-4H-n -SiC 金属-半导体 (MS) 和 Au-Al 2 O 3 –4H-n -制造了SiC金属-绝缘体-半导体(MIS)器件,以检查界面绝缘材料对电子器件性能的影响。为了确定介电特性,电容/电导-电压(C / G –五 ) 测量在很宽的电压范围内实现(- 3.0 伏)–(11.0 伏)。电流-电压(一世 –五 ) 获得电性能的测量是在± 2 . 5 V. 此外,表面态的能量分布(ñ ss ) 和串联电阻(R s ) 是从C / G –五 数据。获得的结果提供了源自界面层的串联电阻(Al 2 O3 ) 是更有效的一世 –五 和C / G –五 在计算主要电气参数时必须考虑的特性。整流比 (RR) 和分流电阻 (R 嘘 ) MIS 装置的体积几乎是 MS 结构的 10 3倍。在Au和4H之间使用Al 2 O 3 -n -SiC还导致势垒高度(BH)值的增加和理想因子值的降低(n ) . 这些结果证实,Al 2 O 3层导致 MS 器件的性能提高,相对于低值ñ ss ,反向饱和电流(一世 0 ) 和n 和高 RR 值,R 嘘 和 BH。
更新日期:2021-03-03
中文翻译:
Au-4H-n-SiC (MS) 和 Au-Al2O3-4H-n-SiC (MIS) 器件主要电参数的测定
在本研究中,Au-4H-