A 2D electron gas with spin–orbit interaction (SOI) is known to form an anisotropic system with van Hove singularities controllable by a parallel magnetic field. The conductivity tensors of this system in the presence of both Rashba and Dresselhaus SOIs is studied. It is found that the diagonal elements of the conductivity tensor have sharp dips when the Fermi level passes through the singularity point of a spectrum. The energy position of these dips at different orientations of the magnetic field allows one to determine both SOI constants and the Landé g‐factor. The dependencies of the surface charge concentration on the Fermi level show a sharp change in the slope near the minimum of the spectrum due to the jumps of the density of states, while the van Hove singularities are not noticeable. In a zero magnetic field, the conductivity tensor has off‐diagonal terms which change the sign when the Fermi level passes the saddle points of the spectrum. The off‐diagonal terms evidence the appearance of the Hall voltage caused by the anisotropy of the Fermi surface and the scattering process.

中文翻译：

---

根据平面磁场中二维电子气中的光谱临界点确定Rashba和Dresselhaus自旋轨道相互作用参数以及g因子

已知具有自旋-轨道相互作用（SOI）的二维电子气会形成各向异性系统，该系统具有可通过平行磁场控制的van Hove奇点。研究了在存在Rashba和Dresselhaus SOI的情况下该系统的电导率张量。可以发现，当费米能级穿过光谱的奇点时，电导率张量的对角元素会出现急剧的下降。这些倾角在磁场的不同方向上的能量位置使人们既可以确定SOI常数，又可以确定Landég因子。表面电荷浓度对费米能级的依赖性表明，由于态密度的跃迁，在最小光谱附近的斜率发生了急剧变化，而范霍夫奇异点则不明显。在零磁场下 电导率张量具有非对角项，当费米能级通过频谱的鞍点时，这些项会改变符号。非对角线项证明了由费米表面的各向异性和散射过程引起的霍尔电压的出现。