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Preparation and characterization of Cu2ZnSnS4 thin films with various compositions deposited by a dual thermal evaporation technique
Journal of Alloys and Compounds ( IF 6.2 ) Pub Date : 2021-03-04 , DOI: 10.1016/j.jallcom.2021.159392
Sarah Alamri , Muna Khushaim , Saleh Alamri

Cu2ZnSnS4 (CZTS) thin films were deposited successfully with four different compositions, namely, Cu-rich, Sn-rich, Zn-rich and near-stoichiometric CZTS, by a dual thermal evaporation technique to investigate the effect of stoichiometry on the physical properties of the deposited films. The thin films were characterized by energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV–VIS–NIR spectroscopy in the as-deposited state and after annealing in nitrogen at 350 °C for 30 min. It was found that the stoichiometry of the film played a critical role in the physical properties and stability after annealing. Increasing the amount of each element compared to that of the others impacted the colour, preferred orientation, grain size, microstrain, dislocation density, surface morphology, transmittance, reflectance, absorbance and band gap of the thin films. A (112) preferred orientation was obtained, and this orientation became more pronounced after the annealing of all films. The stoichiometry of the films changed after annealing due to re-evaporation of the sulfur, and the Cu-rich film was the most stable of the films studied herein. The estimated band gap (Eg) for the as-deposited films varied between 1.53 eV and 2.3 eV and were reduced to 1.1 eV for the Cu-rich film after annealing.



中文翻译:

双重热蒸发技术沉积各种组成的Cu 2 ZnSnS 4薄膜的制备与表征

Cu 2 ZnSnS 4(CZTS)薄膜通过双重热蒸发技术成功沉积了具有四种不同成分的富铜,富锡,富锌和接近化学计量的CZTS薄膜,以研究化学计量对金属物理性能的影响沉积膜。薄膜通过能量色散X射线光谱(EDX),X射线衍射,拉曼光谱,扫描电子显微镜(SEM),原子力显微镜(AFM)和UV-VIS-NIR光谱进行了表征。沉积状态,并在氮气中于350°C退火30分钟后。发现膜的化学计量对退火后的物理性质和稳定性起关键作用。与其他元素相比,每种元素的数量增加都会影响颜色,首选方向,晶粒尺寸,微应变,位错密度,表面形态,透射率,反射率,吸收率和带隙。获得(112)的优选取向,并且在所有膜退火之后,该取向变得更加明显。退火后,膜的化学计量因硫的再蒸发而改变,并且富铜膜是本文研究的膜中最稳定的。估计的带隙(沉积后的薄膜的E g)在1.53 eV和2.3 eV之间变化,退火后的富Cu薄膜的E g)降低到1.1 eV。

更新日期:2021-03-12
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