We pioneered to employ room temperature atomic layer deposition (RTALD) to fabricate flexible Al-Ti-O based metal-insulator-metal (MIM) capacitors on three polymer substrates of polyethylene terephthalate (PET), polyimide (PI) and epoxy resin (epoxy) without any post-processing. Zn was introduced to Al-Ti-O dielectrics to tune its electrical properties through varying ALD cycle ratio and cycle number. Under the optimal processing, the flexible MIM capacitors of Al_1.56Ti_0.47Zn_0.06O₃ exhibits comprehensively better performance such as higher capacitance density of 7.4 fF/μm², smaller leakage current density of 2 × 10⁻⁸ A/cm² at 3 V, and reasonable quadratic voltage linearity of 422 ppm/V². X-ray photoelectron spectroscopy analyses reveal that the incorporation of a slight amount of Zn into Al-Ti-O dielectrics significantly decreases the oxygen vacancy concentration from 6.7% to 0.8%, beneficial for the improvement of electrical performance. Furthermore, our 2 × 2 cm² flexible MIM capacitors could bear 4000 bending cycles at bending radius of 8.2 mm, showing better electrical stability. These results indicate that RTALD-derived Al-Ti-Zn-O dielectrics are competitive MIM capacitor candidates for flexible electronics and wearable devices. RTALD technology exhibits exciting potentials in flexible electronic device fabrication.

我们率先采用室温原子层沉积（RTALD）来在聚对苯二甲酸乙二醇酯（PET），聚酰亚胺（PI）和环氧树脂（环氧树脂）的三种聚合物基板上制造基于Al-Ti-O的柔性金属-绝缘体-金属（MIM）电容器），无需任何后处理。Zn被引入到Al-Ti-O电介质中，以通过改变ALD循环比和循环数来调整其电性能。在最佳处理，铝的柔性MIM电容器_1.56钛_0.47锌_0.06 ö ₃显示出综合性能更好，如为7.4 FF /微米更高电容密度²，2×10小的漏电流密度^-8 A /厘米²3 V时，合理的二次电压线性为422 ppm / V ²。X射线光电子能谱分析表明，将少量的Zn掺入Al-Ti-O电介质中，可使氧空位浓度从6.7％降低到0.8％，有利于改善电性能。此外，我们的2×2 cm ²柔性MIM电容器在8.2 mm的弯曲半径下可以承受4000次弯曲循环，显示出更好的电稳定性。这些结果表明，RTALD衍生的Al-Ti-Zn-O电介质是柔性电子产品和可穿戴设备的竞争性MIM电容器候选产品。RTALD技术在柔性电子设备制造中展现出令人兴奋的潜力。