In this paper, we are reporting the fabrication of a solution-processed SnO₂-based flexible ReRAM using laser-induced graphene (LIG) transferred onto polydimethylsiloxane (PDMS). The fabricated ReRAM showed forming-free and self-compliance bipolar resistive switching characteristics when the applied voltage was swept from 0 V to 4.5 V for SET and from 0 V to - 4.5 V for RESET. The device operates as a filamentary type ReRAM and its conduction mechanism analysis indicates that the space charge limited conduction (SCLC) is dominant mechanism in the analog resistive switching of the fabricated device. For the reliability analysis, 100 cycles of endurance test and 1.8 × 10³ s of retention test were performed. The flexibility of the fabricated ReRAM device was demonstrated by showing that the resistive switching characteristics were still obtained after bending 200 times repeatedly down to 1 mm radius. Our study suggests the new fabrication process of a solution-processed flexible ReRAM and proves its potential applications to flexible electronics.

在本文中，我们报告了使用转移到聚二甲基硅氧烷（PDMS）上的激光诱导石墨烯（LIG）进行溶液处理的基于SnO ₂的柔性ReRAM的制造。当将施加电压从0 V扫描到SET的电压从0 V扫描到4.5 V，将RESET电压从0 V扫描到-4.5 V的电压时，制造的ReRAM表现出无成形和自相容的双极电阻切换特性。该器件以丝状ReRAM的形式运行，其传导机理分析表明，空间电荷受限传导（SCLC）是所制造器件的模拟电阻切换中的主要机理。为了进行可靠性分析，需要进行100次耐力测试和1.8×10 ³个循环 进行了保留测试。通过显示在反复弯曲200次至1 mm半径后仍可获得电阻切换特性，从而证明了所制造的ReRAM器件的灵活性。我们的研究提出了解决方案处理的柔性ReRAM的新制造工艺，并证明了其在柔性电子产品中的潜在应用。