Vertical structures based on Pd Schottky contacts to a ZnO/AZO bilayer have been realized and electrically characterized. Following a preliminary annealing study on the separated ZnO and AZO layers the ZnO/AZO bilayer was first annealed at 450 °C for 30 min to reduce the carrier concentration and then functionalized with a H₂O₂ dip prior to Pd deposition. On the basis of Atomic Force Microscopy, Transmission electron Microscopy and Capacitance vs Voltage measurements it has been found that the H₂O₂ treatment lowers the surface roughness and creates a $~200$ nm thick layer formed by ZnO crystallites with grain size $\lesssim$10 nm embedded into an amorphous matrix with reduced carrier concentration. However, contrary to what previously reported no formation of ZnO₂ has been observed. The obtained Schottky contacts showed a rectification ratio $\gtrsim {10}^2$ at −2 V/+2 V with a detailed analysis based on the differential approach pointing to field enhanced emission from defective channels as the main leaking mechanisms.

已经实现了基于ZnO / AZO双层的Pd肖特基接触的垂直结构，并对其进行了电气特性分析。在对分离的ZnO和AZO层进行初步退火研究之后，首先将ZnO / AZO双层在450°C退火30分钟以降低载流子浓度，然后在Pd沉积之前用H ₂ O ₂浸液进行功能化。根据原子力显微镜，透射电子显微镜和电容与电压的测量结果，发现H ₂ O ₂处理降低了表面粗糙度并产生了$〜200$ 由具有晶粒尺寸的ZnO微晶形成的nm厚的层 $\lesssim$10 nm嵌入具有降低的载流子浓度的无定形基质中。然而，与先前报道的相反，未观察到ZnO _2的形成。所获得的肖特基接触显示出整流比$\gtrsim {10}^{\mathrm{2个}}$ 在−2 V / + 2 V时，基于差分方法的详细分析指出，来自缺陷通道的场增强发射是主要的泄漏机制。