Silicon sulfide (SiS₂) was synthesized from Si, SiC, Si₃N₄, and a eutectic Al-Si liquid. An Ar-CS₂ gas mixture, after bubbling through liquid CS₂, was passed over pulverized Si, SiC, Si₃N₄, or a eutectic Al-Si alloy liquid. White, needle-shaped SiS₂ was precipitated as a single phase on the colder downstream surface when Si powder in a SiO₂ liner was heated over 1273 K. This deposition mechanism involves a reaction between Si and CS₂ to form SiS₂, with the vaporization of SiS(g) and deposition as SiS₂(s) from SiS(g) and S₂(g). Quartz was unaffected by the reaction gases. Notably, Si, SiC, Si₃N₄, and the eutectic Al-Si liquid were found to be suitable sources for SiS₂ synthesis, although this was suppressed owing to Al₂S₃ formation on the latter.

由Si，SiC，Si ₃ N ₄和共晶Al-Si液体合成了硫化硅（SiS ₂）。在通过液体CS ₂鼓泡后，将Ar-CS ₂气体混合物通过粉化的Si，SiC，Si ₃ N ₄或共晶Al-Si合金液体。当将SiO ₂衬里的Si粉加热到1273 K以上时，白色针状SiS ₂以单相形式沉淀在较冷的下游表面上。这种沉积机理涉及Si和CS ₂之间的反应以形成SiS ₂， SiS（g）的汽化并从SiS（g）和S中沉积为SiS ₂（s）₂（g）。石英不受反应气体的影响。值得注意的是，发现Si，SiC，Si ₃ N ₄和低共熔Al-Si液体是SiS ₂合成的合适来源，尽管由于在后者上形成了Al ₂ S ₃而被抑制了。