The impact of film thickness to the electron–phonon coupling and the critical temperature of the superconducting transition, as well as to the structural, phonon and electronic properties of Al films in the ultrathin regime, was studied by means of ab initio calculations. The presence of the inevitable quantum fluctuations in the regime of 5 to 9 atomic layers was found not to be detrimental for the transition critical temperature, as quantum confinement was found to have a monotonically positive impact. As calculations were performed on perfect crystalline films, results of this work give further indirect evidence of the impact of the experimentally observed defects on the superconducting transition. The reduction of the dimensions of materials in the critically low regime of quantum effects can unlock new prospects for high T_c superconducting devices, such as cryogenic light detectors and superconducting single-electron transistors; hence, the understanding of the underlying mechanisms is required for the deterministic tailoring of their properties.

通过从头算计算，研究了膜厚度对电子-声子耦合和超导转变的临界温度以及铝膜在超薄状态下的结构，声子和电子性能的影响。发现5到9个原子层中不可避免的量子涨落对过渡临界温度无害，因为发现量子限制具有单调的积极影响。当对完美的结晶膜进行计算时，这项工作的结果进一步间接证明了实验观察到的缺陷对超导转变的影响。在极低的量子效应范围内减小材料的尺寸可以释放出高T的新前景_c超导设备，例如低温光探测器和超导单电子晶体管；因此，需要对基本机​​制进行了解，以便对其属性进行确定性的调整。