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Tunable intrinsic spin Hall conductivity in bilayerPtTe2by controlling the stacking mode
Physical Review B ( IF 3.7 ) Pub Date : 2021-03-03 , DOI: 10.1103/physrevb.103.125403
Jianwei Li , Hao Jin , Yadong Wei , Hong Guo

We report a systematic study on the intrinsic spin Hall conductivity (ISHC) of bilayer PtTe2 and explore the connection between the stacking order and ISHC. We find that by changing the stacking mode, ISHC can be manipulated from positive to negative values. Such strong stacking-dependent ISHC originates from the interlayer coupling, in which Te atoms in the upper and lower layers can form either van der Waals or covalentlike quasibonding depending on the stacking modes. Thus ISHC can be effectively tuned by changing the stacking order. These results not only allow us to establish fundamental understanding of ISHC in bilayer PtTe2 dependent on the stacking mode but also provide guidelines for the application of bilayer PtTe2 in next-generation spintronic devices.

中文翻译:

通过控制堆叠模式可调节双层PtTe2中的本征自旋霍尔电导率

我们报告了双层内在自旋霍尔电导率(ISHC)的系统研究 2个并探索堆叠顺序与ISHC之间的联系。我们发现,通过改变堆叠模式,ISHC可以从正值变为负值。这种依赖于堆积的强烈ISHC源自层间耦合,其中上层和下层中的Te原子可根据堆积方式形成范德华力或共价键准结合。因此,可以通过更改堆叠顺序来有效地调整ISHC。这些结果不仅使我们能够建立对双层ISHC的基本了解2个 取决于堆叠模式,但也为双层的应用提供指导 2个 在下一代自旋电子设备中。
更新日期:2021-03-03
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