The Schottky barrier is a fundamental issue when an n-type transparent conductive oxide (TCO) is contacted with p-type hydrogenated amorphous silicon (p-a-Si:H) in silicon heterojunction (SHJ) solar cells. Herein, it is found that the hydrogen (H) atoms in p-a-Si:H diffuse into tungsten-doped indium oxide (IWO) during annealing, which improves the electric properties of both the IWO films and the p-a-Si:H/IWO interface. H diffusion reduces the surface work function of p-a-Si:H, and thus reduces the Schottky barrier between the p-a-Si:H and the IWO. Consequently, it improves the hole transport of SHJ solar cells; i.e., both the fill factor (FF) and power conversion efficiency (PCE) substantially increase. These findings provide a new strategy to optimize the FF of SHJ solar cells.

中文翻译：

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延长退火改善硅异质结太阳能电池的空穴传输

当 n 型透明导电氧化物 (TCO) 与硅异质结 (SHJ) 太阳能电池中的 p 型氢化非晶硅 (pa-Si:H) 接触时，肖特基势垒是一个基本问题。在此，发现 pa-Si:H 中的氢 (H) 原子在退火过程中扩散到掺钨的氧化铟 (IWO) 中，这改善了 IWO 薄膜和 pa-Si:H/IWO 的电学性能界面。H 扩散降低了 pa-Si:H 的表面功函数，从而降低了 pa-Si:H 和 IWO 之间的肖特基势垒。因此，它改善了SHJ太阳能电池的空穴传输；即，填充因子 (FF) 和功率转换效率 (PCE) 都大幅增加。这些发现为优化 SHJ 太阳能电池的 FF 提供了一种新策略。