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Large-area uniform few-layer PtS2: Synthesis, structure and physical properties
Materials Today Physics ( IF 11.5 ) Pub Date : 2021-03-03 , DOI: 10.1016/j.mtphys.2021.100376
J. Lu , X. Zhang , G. Su , W. Yang , K. Han , X. Yu , Y. Wan , X. Wang , P. Yang

At present, the research in field of the transition metal dichalcogenides (TMDs) was mostly concentrated in the group 6 TMDs such as MoS2 and WS2 for numerous applications like optoelectronics, sensing and so on. However, our research focuses on the group 10 of TMDs, which is relatively unexplored. Platinum disulfide (PtS2), a typical representative of the group 10 TMDs, is a newly developed two-dimensional materials with high carrier mobility, widely tunable bandgap, and ambient stability for electronic and optoelectronic applications. Here, we experimentally and theoretically investigate the synthesis, structure and physical properties of the few-layer PtS2. A inch scale of few-layer PtS2 was synthesized by direct sulfurization of Pt metal sputtered on the SiO2/Si substrate in a Plasma Enhanced Chemical Vapor Deposition (PE-CVD) furnace. And the electronic band structure of layered PtS2 was obtained by density function theory (DFT). A series of characterizations including Raman spectroscopy, Photoluminescence (PL), atomic force microscopy (AFM), scanning electron microscope (SEM), high-resolution transmission electron microscope (HR-TEM) and X-ray photoelectron spectroscopy (XPS) have demonstrate the quality and uniformity of the few-layer PtS2 as prepared. Moreover, the field-effect transistor (FET) was fabricated based on PtS2 in order to investigate their electronic properties, which show a p-type semiconductor behavior. Further, the work function and potential difference of the PtS2 on the SiO2/Si substrate were measured by Kelvin probe force microscopy (KPFM), showing 32 meV and 36 mV, respectively. The few-layer PtS2 samples were treated with oxygen plasma to investigate the Raman transforms, exhibiting the reduction of Raman intensity after treatment due to oxidation. The idea that this synthesis strategy can also be applied to other PtX2 devices are speculated to promote the application of TMDs in advanced optoelectronic devices.



中文翻译:

大面积均匀的几层PtS 2:合成,结构和物理性质

目前,过渡金属二硫化碳(TMD)领域的研究主要集中在MoS 2和WS 2等第6族TMD,用于光电,传感等众多应用。但是,我们的研究集中在TMD的第10组上,这是一个相对尚未开发的领域。二硫化铂(PtS 2)是10型TMD的典型代表,是一种新开发的二维材料,具有高载流子迁移率,宽可调带隙以及电子和光电应用的环境稳定性。在这里,我们从实验和理论上研究了几层PtS 2的合成,结构和物理性质。一英寸标度的几层PtS 2通过在等离子增强化学气相沉积(PE-CVD)炉中溅射沉积在SiO 2 / Si衬底上的Pt金属直接硫化,合成了Pt金属。并通过密度泛函理论(DFT)获得了层状PtS 2的电子能带结构。拉曼光谱,光致发光(PL),原子力显微镜(AFM),扫描电子显微镜(SEM),高分辨率透射电子显微镜(HR-TEM)和X射线光电子能谱(XPS)等一系列特征已证明制备的几层PtS 2的质量和均匀性。此外,基于PtS 2制造了场效应晶体管(FET)为了研究它们的电子性能,它们表现出p型半导体的行为。此外,通过开尔文探针力显微镜(KPFM)测量了SiO 2 / Si衬底上的PtS 2的功函数和电势差,分别显示出32meV和36mV。用氧气等离子体处理了几层PtS 2样品,以研究拉曼变换,由于氧化,处理后拉曼强度降低。推测这种合成策略也可以应用于其他PtX 2器件的想法被认为可以促进TMD在先进的光电器件中的应用。

更新日期:2021-03-23
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