当前位置: X-MOL 学术IEEE Trans. Circuit Syst. II Express Briefs › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Circuit and System-Level Aspects of Phase Change Memory
IEEE Transactions on Circuits and Systems II: Express Briefs ( IF 4.4 ) Pub Date : 2021-01-06 , DOI: 10.1109/tcsii.2021.3049716
Haralampos Pozidis , Nikolaos Papandreou , Milos Stanisavljevic

Phase Change Memory (PCM) is a new nonvolatile memory technology that promises to disrupt current big data applications and even create entirely new ones. This is because it can serve as both fast storage and large memory, which is out of reach for incumbent memory technologies. This tutorial focuses on recent technological developments and system-level concepts for the realization of PCM-based systems. We also discuss new circuits and architectures that enable novel applications of PCM in big data analytics and hardware for artificial intelligence.

中文翻译:

相变存储器的电路和系统级方面

相变存储器(PCM)是一种新的非易失性存储器技术,有望破坏当前的大数据应用程序,甚至创建全新的应用程序。这是因为它既可以用作快速存储又可以用作大内存,这对于现有的内存技术是无法实现的。本教程重点介绍实现基于PCM的系统的最新技术发展和系统级概念。我们还将讨论使PCM在大数据分析和人工智能硬件中的新颖应用成为可能的新电路和体系结构。
更新日期:2021-03-02
down
wechat
bug