The adoption of high pressure not only reinforces the comprehension of the structure and exotic electronic states of transition metal dichalcogenides (TMDs) but also promotes the discovery of intriguing phenomena. Here, 1T-TaS₂ was investigated up to 100 GPa, and re-enhanced superconductivity was found with structural phase transitions. The discovered I4/mmm TaS₂ presents strong electron–phonon coupling, revealing a good superconductivity of the nonlayered structure. The P–T phase diagram shows a dome shape centered at ~20 GPa, which is attributed to the distortion of the 1T structure. Accompanied by the transition to nonlayered structure above 44.5 GPa, the superconducting critical temperature shows an increasing trend and reaches ~7 K at the highest studied pressure, presenting superior superconductivity compared to the original layered structure. It is unexpected that the pressure-induced re-enhanced superconductivity was observed in TMDs, and the transition from a superconductor with complicated electron-pairing mechanism to a phonon-mediated superconductor would expand the field of pressure-modified superconductivity.

高压的采用不仅增强了过渡金属二硫化碳（TMD）的结构和奇特的电子态的理解，而且促进了令人着迷的现象的发现。在这里，研究了高达100 GPa的1T-TaS ₂，并发现了具有结构相变的重新增强的超导性。被发现的I4 / mmm TaS ₂具有很强的电子-声子耦合，揭示了非分层结构的良好超导性。该P -牛逼相图显示了以〜20 GPa为中心的圆顶形状，这归因于1T结构的变形。伴随着向高于44.5 GPa的非层状结构的转变，超导临界温度呈上升趋势，在最高研究压力下达到〜7 K，与原始层状结构相比，具有超强的超导性。出乎意料的是，在TMDs中观察到了压力诱导的超增强超导性，并且从具有复杂电子配对机制的超导体到声子介导的超导体的转变将扩大压力修饰的超导性的领域。