Pure and Ni-Co dual doped CdSe thin films were deposited on glass substrate by chemical bath deposition (CBD) technique. The deposited thin films were annealed for 1 h at 500 °C. X-ray diffraction (XRD) and UV–vis Spectroscopy were used to study the structural and optical properties of the prepared thin films. XRD studies revealed the hexagonal phase for pure CdSe, CdSe: 0%Ni-8%Co, CdSe: 2%Ni-6%Co, CdSe: 6%Ni-2%Co and CdSe: 8%Ni-0%Co thin films, while CdSe: 4%Ni-4%Co produced the cubic phase. The XRD results revealed that the dual doping affected strongly the preferred orientation of the crystallites. The optical band gap energy, Urbach energy, Extinction coefficient, refractive index, real and imaginary dielectric constants and optical conductivity were calculated for all obtained thin films. The direct optical band gap energy of pure CdSe film was 1.43 eV and it decreased with Ni and Co dual doping. The lowest optical band gap energy was observed for CdSe: 4%Ni-4%Co. The dual doping with Ni and Co increased the efficiency of CdSe thin films to be used as solar cells.

通过化学浴沉积（CBD）技术在玻璃基板上沉积纯和Ni-Co双掺杂CdSe薄膜。沉积的薄膜在500°C退火1小时。X射线衍射（XRD）和紫外可见光谱用于研究所制备薄膜的结构和光学性质。XRD研究显示纯CdSe，CdSe：0％Ni-8％Co，CdSe：2％Ni-6％Co，CdSe：6％Ni-2％Co和CdSe：8％Ni-0％Co的六方相薄膜，而CdSe：4％Ni-4％Co生成立方相。XRD结果表明，双重掺杂强烈影响了微晶的优选取向。对于所有获得的薄膜，计算了光学带隙能量，Urbach能量，消光系数，折射率，实，虚介电常数和光导率。纯CdSe薄膜的直接光学带隙能量为1.43 eV，并且随着Ni和Co双重掺杂而降低。对于CdSe：4％Ni-4％Co观察到最低的光学带隙能量。镍和钴的双重掺杂提高了用作太阳能电池的CdSe薄膜的效率。