The construction of heterojunction is an effective strategy to manipulate the dynamic behaviors of photo-induced charges. It is essential for wide band gap semiconductor to introduce defects reasonably to mediate electronic properties and charge behaviors. Herein, through an in situ etching growing method and thermal treatment, dual defective ternary photocatalyst ZnS/ZnO-In₂O₃ with porous layered structure and extensive heterojunction interfaces has been prepared for visible light photocatalysis of water splitting. The suitable position of intermediate energy level endows the ternary photocatalyst with the ability of electrons directed flow between the different components, and the transfer mode follows Z-scheme. The cascaded dual defects on ZnO and ZnS synergistically facilitate the efficient separation of photo-generated charges through the intimate interface, and further enhance visible light photocatalysis performance. This work is expected to enlighten the rational design of dual defects for wide bandgap semiconductor.

异质结的构建是控制光诱导电荷动力学行为的有效策略。宽带隙半导体必须合理地引入缺陷以介导电子性能和电荷行为，这一点至关重要。本文中，通过原位蚀刻生长方法和热处理，制备了双缺陷三元光催化剂ZnS / ZnO-In ₂ O _3。具有多孔层状结构和广泛的异质结界面的材料已经制备用于可见光光解水。中间能级的合适位置赋予三元光催化剂以电子在不同组分之间定向流动的能力，并且转移模式遵循Z方案。ZnO和ZnS上的级联双缺陷协同促进了通过紧密界面有效分离光生电荷，并进一步增强了可见光的光催化性能。这项工作有望启发宽带隙半导体双重缺陷的合理设计。