Abstract

Lead-free K_0.5Na_0.5NbO₃ thin films with different excess ratios of alkali metal were prepared by chemical solution deposition method. The volatilization rate of the K, Na elements at a certain temperature was calculated by EDS analysis. The volatilization rate of K element is 55% and Na element is 10% when the KNN thin film was pre-sintered at the temperature of 375 °C and then final heated at the temperature of 675 °C. The prepared KNN thin films with the right excess ratios (K-55%, Na-10%) obtained uniform and dense microstructure, and gain well ferroelectric property.

中文翻译：

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碱金属过量对K0.5Na0.5NbO3薄膜组织和铁电性能的影响

摘要

采用化学溶液沉积法制备了碱金属过量比不同的无铅K _0.5 Na _0.5 NbO ₃薄膜。通过EDS分析计算出一定温度下K，Na元素的挥发速率。当在375°C的温度下预烧结KNN薄膜，然后在675°C的温度下最终加热时，K元素的挥发率为55％，Na元素的挥发率为10％。所制备的KNN薄膜具有正确的过量比（K-55％，Na-10％），可获得均匀且致密的微观结构，并具有良好的铁电性能。