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Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
Technical Physics ( IF 0.7 ) Pub Date : 2021-03-01 , DOI: 10.1134/s106378422102016x G. G. Zegrya , V. P. Ulin , A. G. Zegrya , N. V. Ulin , V. M. Frayman , Yu. M. Mikhailov
中文翻译：
勘误：氢氟酸溶液中阳极刻蚀过程中硅晶体的导电类型和掺杂水平对形成的孔道尺寸的影响
更新日期：2021-03-01
Technical Physics ( IF 0.7 ) Pub Date : 2021-03-01 , DOI: 10.1134/s106378422102016x G. G. Zegrya , V. P. Ulin , A. G. Zegrya , N. V. Ulin , V. M. Frayman , Yu. M. Mikhailov
An Erratum to this paper has been published: https://doi.org/10.1134/S106378422102016X
中文翻译：
勘误：氢氟酸溶液中阳极刻蚀过程中硅晶体的导电类型和掺杂水平对形成的孔道尺寸的影响
该论文的勘误已经发布：https://doi.org/10.1134/S106378422102016X
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