Abstract

It is shown for the first time that thin boron phosphide (BP) layers on silicon substrates can be formed by low-temperature plasma-enhanced atomic layer deposition at 250°C. Experiments demonstrated the possibility of using these BP/Si interfaces as selective hole contacts to silicon in solar cells.

中文翻译：

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低温等离子体增强原子层沉积形成的选择性BP / Si接触

摘要

首次显示可以通过在250°C下进行低温等离子体增强的原子层沉积来在硅基板上形成薄的磷化硼（BP）层。实验证明了使用这些BP / Si界面作为太阳能电池中硅的选择性空穴接触的可能性。