In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by using nonlinear quantum kinetic theory based on a non-equilibrium statistical ensemble formalism (NESEF). In the present paper, these results are compared with calculations using Monte Carlo modelling simulations and experimental measurements. Both n-type and p-type materials, in the presence of intermediate to high electric fields, are considered for several temperatures and carrier concentrations. The agreement between the results obtained using nonlinear quantum kinetic theory, with those of Monte Carlo calculations and experimental data is remarkably good, thus satisfactorily validating the NESEF.

在本文中，我们提供了一组结果，这些结果集中于使用非线性量子计算的，在瞬态和稳态下掺杂的带隙直带倒带高极性III氮化物半导体（GaN，AlN，InN）和GaAs的传输特性。基于非平衡统计集成形式主义（NESEF）的动力学理论。在本文中，将这些结果与使用蒙特卡洛建模模拟和实验测量的计算结果进行了比较。无论ñ型和p在中等至高电场的情况下，考虑到几种温度和载流子浓度，需要使用高型材料。使用非线性量子动力学理论获得的结果与蒙特卡洛计算的结果和实验数据之间的一致性非常好，从而令人满意地验证了NESEF。