Abstract

The porous silicon film surface region containing silver particles is studied by scanning electron microscopy and Raman spectroscopy. The porous silicon film is formed by metal-assisted etching of a single-crystal silicon substrate. It is found that the distribution of silver particles is controlled by the porous layer morphology. The formation of silver particles by chemical deposition results in certain smoothing of the por-Si film surface relief. In this case, the silicon crystallite structure does not change significantly.

中文翻译：

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金属辅助刻蚀形成的多孔硅膜表面上含银颗粒的半导体表面结构的特征

摘要

通过扫描电子显微镜和拉曼光谱研究含银颗粒的多孔硅膜表面区域。多孔硅膜通过单晶硅基板的金属辅助蚀刻而形成。发现银颗粒的分布受多孔层形态的控制。通过化学沉积形成银颗粒会导致por-Si膜表面浮雕一定程度的平滑。在这种情况下，硅微晶结构不会显着改变。