Abstract

The electrophysical properties and the resistive switching effect in ITO/SiN_x/Si memristor structures have been investigated. A silicon nitride film ~200 nm thick with a Si/N ratio varying with depth has been deposited on a silicon substrate by chemical vapor deposition. The current–voltage characteristics of ITO/SiN_x/Si-p structures have shown that the conduction mechanism in a high-resistivity state depends on the properties of the nitride film and is described in terms of the Pool–Frenkel model, which takes into consideration electron hops between neighboring traps. When the polarity of the voltage applied to the structure changes sign, conducting channels in the nitride film break down and the structure switches over to a high-resistivity state. The photoswitching effect has been discovered in the ITO/SiN_x/Si structure, which opens up a new frontier for using memristors in silicon optoelectronic devices.

中文翻译：

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基于氮化硅的结构的电阻切换效应

摘要

研究了ITO / SiN _x / Si忆阻器结构中的电物理性质和电阻转换效应。已经通过化学气相沉积在硅基板上沉积了约200nm厚，Si / N比随深度变化的氮化硅膜。ITO / SiN _x / Si- p的电流-电压特性结构表明，高电阻率状态下的传导机制取决于氮化物膜的特性，并根据Pool-Frenkel模型进行了描述，该模型考虑了相邻陷阱之间的电子跃迁。当施加到结构的电压的极性改变符号时，氮化物膜中的导电沟道破裂，并且结构切换到高电阻率状态。在ITO / SiN _x / Si结构中发现了光开关效应，这为在硅光电器件中使用忆阻器开辟了新的领域。