The photoelectric properties of ZnO-doped WSe₂ thin films created on Si substrates by a thermal evaporation method were investigated. The effects of ZnO on the surface morphology, structure, photoluminescence, light absorption characteristics and electrical properties of WSe₂ thin films were analyzed. It is found that the nucleation density and the crystallinity of the ZnO-doped WSe₂ nanowires are higher than without doping, and the electron mobility of the doped sample is about 1.4 times that of the undoped sample. Also, doping improved the light absorption and photoluminescence efficiency. Additionally, the I–V curve of the ZnO-doped WSe₂/Si heterojunction gradually changes from a rectification characteristic to a linear dependence, and the photocurrent increases by about four times when the light power increases from 0 to 25 mW/cm². Moreover, the heterojunction has a very high sensitivity to operating temperature; the current significantly increases as the temperature increases to 300∘. With high absorptivity and photoluminescence efficiency, and sensitivity to light and temperature, ZnO-doped WSe₂ film is promising for use in optoelectronic devices.

中文翻译：

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ZnO掺杂WSe2薄膜的增强光电性能

研究了通过热蒸发法在Si衬底上形成的掺杂ZnO的WSe ₂薄膜的光电性能。分析了ZnO对WSe ₂薄膜的表面形貌、结构、光致发光、光吸收特性和电学性能的影响。发现掺杂ZnO的WSe ₂纳米线的成核密度和结晶度均高于未掺杂样品，掺杂样品的电子迁移率约为未掺杂样品的1.4倍。此外，掺杂提高了光吸收和光致发光效率。此外，一世–五ZnO掺杂WSe ₂ /Si异质结的曲线由整流特性逐渐变为线性相关，当光功率从0增加到25mW/cm ²时，光电流增加约4倍。此外，异质结对工作温度的敏感性非常高；电流显着增加，因为温度升高到300∘. _{ZnO掺杂的WSe 2}薄膜具有高吸收率和光致发光效率以及对光和温度的敏感性，有望用于光电器件。