In this article, the interfacial properties of nMOSFETs with different thickness high- $\kappa $ Al ₂ O ₃ capping layer on an 8-nm SiO ₂ and TiN gate stacks have been investigated using electrical measurement and low-frequency noise at room temperature. It is shown that the predominant 1/ ${f}$ noise is governed by the number fluctuations mechanism. It is indicated that: 1) presence of an Al ₂ O ₃ capping layer increases the noise power spectral density and, hence, the oxide trap density has an influence on the low-field mobility further and 2) effective work-function and the threshold voltage of nMOSFET should be modulated using the high- $\kappa $ Al ₂ O ₃ capping layers.

中文翻译：

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具有不同Al ₂ O ₃盖层厚度和TiN栅叠层的nMOSFET的界面特性

在本文中，具有不同厚度的nMOSFET的界面特性 $ \ kappa $ 使用电学测量和室温下的低频噪声，已经研究了8 nm SiO ₂和TiN栅叠层上的Al ₂ O ₃覆盖层 。结果表明，主要的1 / $ {f} $ 噪声由数量波动机制控制。结果表明：1）Al ₂ O ₃覆盖层的存在增加了噪声功率谱密度，因此，氧化物阱的密度进一步影响了低场迁移率； 2）有效功函数和阈值nMOSFET的电压应使用高 $ \ kappa $ Al ₂ O ₃覆盖层。