This article investigates the influence of resistive protective oxide (RPO) layer density and hot carrier stress (HCS) degradation in n-channel lateral diffused silicon-on-insulator metal–oxide–semiconductor field-effect transistors. At the beginning of HCS at a higher gate voltage ( ${V}_{G}$ ), the threshold voltage shifts and subthreshold swing increase, but the ON-state current will still increase abnormally. The drain current and drain voltage ( ${I}_{D}$ – ${V}_{D}$ ) transfer curves indicate that channel resistance or drift region resistance dominates degradation between low- ${V}_{G}$ and high- ${V}_{G}$ respectively. It also found different degradation behavior by extracting the resistances at low- ${V}_{G}$ and high- ${V}_{G}$ to stress time. In addition, technology computer-aided design (TCAD) software results show maximum impact ionization of high- ${V}_{G}$ , in which the direction of the electric field is toward RPO, resulting in the injection of holes into RPO during HCS. Finally, the simulated drain current and gate overdrive voltage curves for numerous interface states and numerous oxide traps show that the abnormal ${I}_{ \mathrm{\scriptscriptstyle ON}}$ enhancement is due to the hole trapping in the RPO and the degradation is closely related to the different density of RPO. In this article, we determine the mechanism of HCS degradation and propose methods to optimize high-voltage (HV) device performance and reliability.

中文翻译：

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n沟道LD SOI MOSFET中的电阻保护性氧化物（RPO）与热载流子应力（HCS）退化之间的关系

本文研究了在n沟道横向扩散的绝缘体上硅金属氧化物半导体场效应晶体管中电阻保护性氧化物（RPO）层密度和热载流子应力（HCS）退化的影响。在HCS的开始时，栅极电压较高（ $ {V} _ {G} $ ），阈值电压漂移和亚阈值摆幅增加，但通态电流仍将异常增加。漏极电流和漏极电压（ $ {I} _ {D} $ – $ {V} _ {D} $ ）传输曲线表明，沟道电阻或漂移区电阻主导着低阻抗之间的降级。 $ {V} _ {G} $ 和高 $ {V} _ {G} $ 分别。通过提取低电阻的电阻，还发现了不同的降解行为。 $ {V} _ {G} $ 和高 $ {V} _ {G} $ 强调时间。此外，技术计算机辅助设计（TCAD）软件的结果表明，高能 $ {V} _ {G} $ ，其中电场方向朝向RPO，导致在HCS期​​间向RPO注入空穴。最后，针对多种界面状态和多种氧化物陷阱的模拟漏极电流和栅极过驱动电压曲线表明，异常 $ {I} _ {\ mathrm {\ scriptscriptstyle ON}} $ 增强是由于RPO中存在空穴陷阱，而降解与RPO的不同密度密切相关。在本文中，我们确定了HCS退化的机理，并提出了优化高压（HV）器件性能和可靠性的方法。