We report the fluorine (F) doping effect on zinc oxide (ZnO) thin-film transistor (TFT) fabricated by spray pyrolysis on spray-coated zirconia alumina oxide (ZAO) gate insulator. F doping was performed by NF ₃ plasma treatment on ZnO thin film. The ZnO film shows ${C}$ -axis-aligned hexagonal structure, which remains unchanged by F doping. The photoluminescence (PL) spectra and X-ray photoelectron spectroscopy (XPS) show a reduction in oxygen-related defects by F doping. Valance band edge XPS spectra show the shift of Fermi energy level from 2.46 to 3.12 eV which reveals that the more carriers are generated in the conduction band and defect states are reduced. The F-doped ZnO (F:ZnO) TFT exhibits the saturation mobility of 31.59 cm ² V ⁻¹ s ⁻¹ , the subthreshold swing of 238mV/dec, ON/ OFF current ratio of ~10 ⁸ , and zero hysteresis voltage. The F:ZnO TFT also shows significant improvement of threshold voltage shift ( $\Delta \text{V}_{TH}$ ) under negative/positive gate bias stress compared to pristine ZnO. The enhancement of mobility and stability is attributed to the substitution of oxygen (O) and passivation of oxygen vacancies ( ${V}_{o}$ ) by F in ZnO. Therefore, it is expected that F doping is an effective method to improve the performance and stability of solution-processed oxide TFTs.

中文翻译：

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喷涂Zr–Al–O栅极绝缘体进行F掺杂可改善喷涂ZnO TFT的性能

我们报告了氟（F）掺杂对氧化锌（ZnO）薄膜晶体管（TFT）的影响，该薄膜晶体管是通过在喷涂的氧化锆氧化铝（ZAO）栅极绝缘体上进行喷雾热解而制成的。通过NF ₃等离子体处理在ZnO薄膜上进行F掺杂 。ZnO薄膜显示 $ {C} $ 轴排列的六边形结构，通过F掺杂保持不变。光致发光（PL）光谱和X射线光电子能谱（XPS）显示通过F掺杂减少了与氧有关的缺陷。价带边缘XPS谱显示费米能级从2.46 eV转移到3.12 eV，这表明在导带中产生了更多的载流子，并且缺陷态减少了。F掺杂的ZnO（F：ZnO）TFT的饱和迁移率为31.59 cm ² V ^-1 s ^-1 ，亚阈值摆幅为238mV / dec，ON / OFF电流比为〜10 ⁸ ，滞后电压为零。F：ZnO TFT还显示出阈值电压偏移的显着改善（ $ \ Delta \ text {V} _ {TH} $ ）与原始ZnO相比在负/正的栅极偏置应力下）。迁移率和稳定性的提高归因于氧（O）的取代和氧空位的钝化（ $ {V} _ {o} $ ）由ZnO中的F表示。因此，期望F掺杂是提高溶液处理的氧化物TFT的性能和稳定性的有效方法。