In this article, we demonstrate atomic-layer-deposited (ALD) indium oxide (In ₂ O ₃ ) transistors with a record high drain current of 2.2 A/mm at ${V}_{DS}$ of 0.7 V among oxide semiconductor transistors with the enhancement-mode operation. The impact of back-end-of-line (BEOL) compatible low-temperature annealing is systematically studied on these highly scaled In ₂ O ₃ transistors with channel length ( ${L}_{ch}$ ) down to 40 nm, channel thickness ( ${T}_{ch}$ ) down to 1.2 nm, and equivalent oxide thickness (EOTs) of 2.1 nm, at annealing temperatures from 250 °C to 350 °C in N ₂ , O ₂ , and forming gas (FG, 96% N ₂ /4% H ₂ ) environments. Annealing in all different environments is found to significantly improve the performance of ALD In ₂ O ₃ transistors, resulting in enhancement-mode operation, high mobility, reduced bulk and interface trap density ( $\text{D}_{it}$ as low as $6.3\times 10^{11}$ cm $^{-2}\cdot $ eV ⁻¹ ), and nearly ideal subthreshold slope (SS) of 63.8 mV/dec. Remarkably, the ALD In ₂ O ₃ devices are found to be stable in hydrogen environment, being less affected by the well-known hydrogen doping issue in indium–gallium–tin-oxide (IGZO). Therefore, low-temperature ALD In ₂ O ₃ transistors are highly compatible with the hydrogen-rich environment in BEOL fabrication processes.

中文翻译：

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通过低温退火和氢环境稳定性在₂ O ₃晶体管中沉积模式增强的原子层，该晶体管在0.7 V的漏极电压下的最大漏极电流为2.2 A / mm

在本文中，我们演示了原子层沉积（ALD）氧化铟（In ₂ O ₃ ）晶体管，其在2007年的2.2 A / mm的高漏极电流达到了创纪录的水平 $ {V} _ {DS} $ 具有增强模式操作的氧化物半导体晶体管中的0.7 V为0.7V。后端制的线（BEOL）兼容低温退火的影响进行了系统研究在这些高度缩放在 _2个 ö ₃晶体管与沟道长度（ $ {L} _ {ch} $ ）低至40 nm，通道厚度（ $ {T} _ {ch} $ ）退火至250°C至350°C的N ₂ ，O ₂ 和形成气体（FG，96％N ₂ /4％H ₂）中的退火温度降至1.2 nm，等效氧化物厚度（EOT）为2.1 nm ）环境。发现在所有不同环境中的退火都可以显着改善ALD In ₂ O ₃晶体管的性能 ，从而实现增强模式操作，高迁移率，减小的体积和界面陷阱密度（ $ \ text {D} _ {it} $ 低至 $ 6.3 \乘以10 ^ {11} $ 厘米 $ ^ {-2} \ cdot $ eV ^-1 ）和接近理想的63.8 mV / dec的亚阈值斜率（SS）。值得注意的是，发现ALD In ₂ O ₃器件在氢环境中稳定，受到铟-镓-锡-氧化物（IGZO）中众所周知的氢掺杂问题的影响较小。因此，低温ALD In ₂ O ₃晶体管与BEOL制造过程中的富氢环境高度兼容。