In this work, amorphous InSe thin films coated with 30–160-nm-thick SiO ₂ are used as an active material to fabricate multifunctional devices. The ${n}$ -InSe/ ${p}$ -SiO ₂ layers that are deposited onto ytterbium substrates are optically and electrically characterized. It was observed that the coating of SiO ₂ nanosheets onto the surface of InSe enhances the light absorbability in the near-infrared range without remarkable altering of the bandgap. Significant increase in the steady-state photocurrent values accompanied by faster photocurrent responses resulted from the coating of SiO ₂ nanosheets. Electrically, while the Yb/InSe/Au channels display tunneling Schottky barrier characteristics, the Yb/InSe/SiO ₂ /Au channels show pn junction features. Both channels displayed metal–oxide–semiconductors (MOS) capacitance–voltage characteristics. In addition, the analyses of the current–voltage characteristics have shown that the currents in the Yb/InSe/Au and Yb/InSe/SiO ₂ (30 nm)/Au channel are dominated by electric field-assisted thermionic emission (tunneling) of charge carriers through barriers of widths of 18/14 and 30/16 nm under reverse-/forward-biasing conditions, respectively. Further increase in the oxide layer thickness lowered the barrier height of the devices. On the other hand, when an ac signal of low amplitude is imposed through the device channels, the conductance, capacitance, and reflection coefficient spectra displayed bandstop filter characteristics near 1.6 GHz. The microwave cutoff frequency spectra show a remarkable increase in the cutoff frequency values as a result of the coating of InSe with SiO ₂ nanosheets. The features of the device assure its applicability as rectifying diodes, fast photosensors, MOS capacitors, and microwave bandstop filters.

中文翻译：

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Yb / InSe / SiO 2 / Au跨越式隧穿器件，设计用作光电传感器，MOS电容器和千兆赫带阻滤波器

在这项工作中，涂有30-160 nm厚SiO _2的非晶InSe薄膜 用作制造多功能器件的活性材料。这 $ {n} $ -InSe / $ {p} $ 对沉积在衬底上的 -SiO ₂层进行光学和电学表征。观察到，在InSe表面上涂覆SiO ₂纳米片增强了在近红外范围内的光吸收能力，而没有明显改变带隙。SiO ₂纳米片的涂层导致稳态光电流值的显着增加以及更快的光电流响应 。在电学上，尽管Yb / InSe / Au通道显示隧道肖特基势垒特性，但Yb / InSe / SiO ₂ / Au通道显示pn结功能。两个通道均显示金属-氧化物-半导体（MOS）电容-电压特性。此外，对电流-电压特性的分析表明，Yb / InSe / Au和Yb / InSe / SiO ₂中的电流 （30 nm）/ Au通道分别由电场辅助的热载流子在反向/正向偏置条件下通过宽度为18/14和30/16 nm的势垒进行电荷载流子的热电子发射（隧穿）来控制。氧化物层厚度的进一步增加降低了器件的势垒高度。另一方面，当通过设备通道施加低幅度的交流信号时，电导，电容和反射系数谱显示的带阻滤波器特性接近1.6 GHz。微波截止频谱显示出截止频率值的显着增加，这是因为用SiO ₂纳米片覆盖了InSe 。该器件的特性确保了其作为整流二极管，快速光电传感器，MOS电容器和微波带阻滤波器的适用性。