A novel nanopillar-based n-CdS/p-CdTe solar cell with p-CdZnTe electron-reflecting layer has been proposed. The proposed structure features a p-CdZnTe electron-reflecting layer at the anode electrode side of the device. Device simulation using TCAD device simulator SILVACO has shown that the open-circuit voltage ( ${V}_{oc}$ ) of the device can be improved without degrading the short circuit current density ( ${J}_{sc}$ ) of the device. Furthermore, the effect of Zn composition in the p-CdZnTe layer has also been studied on the device performance parameters of interest such as open-circuit voltage ( ${V}_{oc}$ ), short circuit current density ( ${J}_{sc}$ ), fill factor (FF), and solar cell conversion efficiency ( $\eta $ ). A detailed analysis has shown that increasing the Zn composition beyond 40% limits the FF due to the increase in the valence band offset energy $\varDelta {E}_{v}$ , on the other hand, lowering Zn composition below 40% decreases the much-desired conduction band offset energy ( $\varDelta {E}_{c}$ ) value. The best tradeoff relationship between the ${V}_{oc}$ and FF has been achieved for the Zn composition of 40% in the p-CdZnTe layer. At this composition of Zn, the ${V}_{oc}$ , FF, and solar cell $\eta $ of the device seem to be improved by 33%, 21%, and 61% respectively.

中文翻译：

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使用电子反射层提高CdS / CdTe太阳纳米结构电池的效率

提出了一种新型的具有p-CdZnTe电子反射层的基于纳米柱的n-CdS / p-CdTe太阳能电池。所提出的结构在器件的阳极侧具有p-CdZnTe电子反射层。使用TCAD设备仿真器SILVACO进行的设备仿真显示，开路电压（ $ {V} _ {oc} $ 器件的）可以改善而不会降低短路电流密度（ $ {J} _ {sc} $ ）的设备。此外，还研究了p-CdZnTe层中Zn组成的影响对器件性能参数的影响，例如开路电压（ $ {V} _ {oc} $ ），短路电流密度（ $ {J} _ {sc} $ ），填充系数（FF）和太阳能电池转换效率（ $ \ eta $ ）。详细的分析表明，由于价带偏移能量的增加，使Zn的组成增加到40％以上会限制FF。 $ \ varDelta {E} _ {v} $ 另一方面，将Zn含量降低到40％以下会降低人们非常希望的导带偏移能量（ $ \ varDelta {E} _ {c} $ ） 价值。最佳的权衡关系 $ {V} _ {oc} $ p-CdZnTe层中Zn的含量达到40％时达到FF。在锌的这种组成下， $ {V} _ {oc} $ ，FF和太阳能电池 $ \ eta $ 设备的性能似乎分别提高了33％，21％和61％。