This article proposes a compact trench-assisted space-modulated junction termination extension (TSM-JTE) design for high-voltage 4H-silicon carbide (SiC) devices. In this design, trench structures are introduced into the JTE region to effectively split the termination region into three functional zones. The proposed termination structure is cost effective in terms of the chip area it occupies; for devices rated at 10 kV, the termination structure extends the edge of the device by only $250~\mu \text{m}$ . Requiring only one implant, it is relatively cheap to fabricate, while a wide implantation dose window endures that is relatively insensitive to variations in dose that may occur during processing. The same advantages occur at 20 kV, the TSM-JTE proving to have the best tradeoff between maximum breakdown voltage and implantation window, compared with other single implant termination designs, achieving this in $500~\mu \text{m}$ of termination length. At 3.3 kV, a 110- $\mu \text{m}$ TSM-JTE retains its advantages over the other JTE designs, but floating field rings are expected to consume less area, though this is not the case at the higher voltages.

中文翻译：

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适用于高压4H-SiC器件的紧凑型沟槽辅助空间调制JTE设计

本文提出了一种用于高压4H碳化硅（SiC）器件的紧凑型沟槽辅助空间调制结终端扩展（TSM-JTE）设计。在这种设计中，沟槽结构被引入JTE区域，以有效地将终端区域划分为三个功能区域。提议的端接结构就其占用的芯片面积而言具有成本效益。对于额定电压为10 kV的设备，端接结构仅将设备的边缘延伸 $ 250〜\ mu \ text {m} $ 。仅需要一个植入物，制造相对便宜，而持久的宽植入剂量窗口对处理期间可能发生的剂量变化不敏感。在20 kV时也具有相同的优势，与其他单注入终止设计相比，TSM-JTE在最大击穿电压和注入窗口之间具有最佳折衷，这证明了这一点。 $ 500〜\ mu \ text {m} $ 终止长度。在3.3 kV时，110- $ \ mu \ text {m} $ TSM-JTE保留了其与其他JTE设计相比的优势，但是浮动磁场环预计将占用更少的面积，尽管在较高的电压下情况并非如此。